Organic light emitting display apparatus

ABSTRACT

An organic light emitting display apparatus includes a base layer, a circuit element layer, a display element layer, an encapsulation layer, and a sealing member. The circuit element layer includes a power supply line on the base layer and an auxiliary power supply pattern on and connected to the power supply line. The display element layer includes a first electrode, a light emitting layer, and a second electrode, which are sequentially stacked on the circuit element layer. The second electrode is electrically connected to the auxiliary power supply pattern. The sealing member is between the circuit element layer and the encapsulation layer to overlap with the auxiliary power supply pattern when viewed in a plan view.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2018-0053725, filed on May 10, 2018, the contents ofwhich are hereby incorporated by reference in its entirety.

BACKGROUND 1. Field

Aspects of embodiments of the present disclosure relate to an organiclight emitting display apparatus.

2. Description of the Related Art

In recent years, an organic light emitting display apparatus has beenemployed in various display apparatuses since it has advantages, such aswide viewing angle, superior contrast, and fast response speed.

The organic light emitting display apparatus includes an organic lightemitting diode to emit a light, and the organic light emitting diode isvulnerable to moisture and oxygen. For the organic light emitting diode,a sealing member is disposed on an exterior of the organic lightemitting display apparatus to seal the organic light emitting diode.

The sealing member may be formed by placing a curable material between alower substrate and an upper substrate and curing the curable material;however, a defect may occur in circuit elements around the sealingmember during the curing process.

SUMMARY

According to an aspect of embodiments of the present disclosure, anorganic light emitting display apparatus is capable of reducing anon-display area of a display panel.

According to another aspect of embodiments of the present disclosure, anorganic light emitting display apparatus is capable of preventing orsubstantially preventing circuit elements overlapped with a sealingmember from becoming defective during a curing process for the sealingmember.

According to one or more embodiments of the inventive concept, anorganic light emitting display apparatus includes a base layer, acircuit element layer, a display element layer, an encapsulation layer,and a sealing member.

In one or more embodiments, the base layer includes a display area and anon-display area adjacent to the display area.

In one or more embodiments, the circuit element layer includes a powersupply line and an auxiliary power supply pattern. The power supply lineis on the base layer to receive a common voltage. The auxiliary powersupply pattern is on the power supply line, overlapped with the powersupply line, and connected to the power supply line.

In one or more embodiments, the display element layer includes a firstelectrode, a light emitting layer, and a second electrode. The firstelectrode is on the circuit element layer. The light emitting layer ison the first electrode. The second electrode is on the light emittinglayer and electrically connected to the auxiliary power supply pattern.

In one or more embodiments, the encapsulation layer is on the displayelement layer.

In one or more embodiments, the sealing member is between the circuitelement layer and the encapsulation layer and disposed in thenon-display area to overlap with the auxiliary power supply pattern whenviewed in a plan view.

In one or more embodiments, the auxiliary power supply pattern contactsthe sealing member.

In one or more embodiments, the display element layer further includesan auxiliary pattern in the non-display area, located on a same layer asthe first electrode, and connected to the auxiliary power supplypattern.

In one or more embodiments, the circuit element layer further includes afirst intermediate insulating layer and a second intermediate insulatinglayer. The first intermediate insulating layer is between the powersupply line and the auxiliary power supply pattern and includes acontact hole through which the power supply line is connected to theauxiliary power supply pattern. The second intermediate insulating layeris between the auxiliary power supply pattern and the auxiliary patternand includes a contact hole through which the auxiliary power supplypattern is connected to the auxiliary pattern.

In one or more embodiments, the display element layer further includes apixel definition layer between the auxiliary pattern and the secondelectrode, the pixel definition layer including a contact hole throughwhich the auxiliary pattern is connected to the second electrode, and anopening in which the light emitting layer is located.

In one or more embodiments, the circuit element layer further includes aswitching transistor, a driving transistor, and a light emitting controltransistor.

In one or more embodiments, the switching transistor includes a controlelectrode to receive a scan signal, an input electrode to receive a datasignal, and an output electrode.

In one or more embodiments, the driving transistor includes an inputelectrode connected to the output electrode of the switching transistor.

In one or more embodiments, the light emitting control transistorincludes a control electrode to receive a light emitting signal and isconnected between a voltage line and the driving transistor or betweenthe driving transistor and the first electrode.

In one or more embodiments, the circuit element layer further includes alight emitting line driving circuit and a gate driving circuit. Thelight emitting line driving circuit applies the light emitting signal tothe light emitting control transistor. The gate driving circuit appliesthe scan signal to the switching transistor. The light emitting linedriving circuit is farther from the display area than the gate drivingcircuit when viewed in a plan view.

In one or more embodiments, the auxiliary power supply pattern overlapswith the light emitting line driving circuit.

In one or more embodiments, the auxiliary power supply pattern includesa material having a melting point higher than a melting point of thepower supply line.

In one or more embodiments, the circuit element layer further includes avoltage line receiving a source voltage greater than the common voltageand an auxiliary voltage pattern above the voltage line and connected tothe voltage line.

In one or more embodiments, the auxiliary voltage pattern is on a samelayer as the auxiliary power supply pattern and overlaps with thesealing member.

In one or more embodiments, the auxiliary voltage pattern contacts thesealing member.

In one or more embodiments, the circuit element layer further includes apad part in the non-display area. The auxiliary voltage pattern isbetween the pad part and the display area when viewed in a plan view.

In one or more embodiments, the circuit element layer further includes adata line and a demultiplexer. The demultiplexer is connected betweenthe pad part and the data line. The auxiliary voltage pattern covers thedemultiplexer when viewed in a plan view.

In one or more embodiments, the circuit element layer further includesan anti-static pattern in the non-display area. The auxiliary voltagepattern covers the anti-static pattern when viewed in a plan view.

In one or more embodiments, the circuit element layer further includesan insulating layer under the auxiliary power supply pattern. Theauxiliary power supply pattern comprises a hole defined therethrough,and the sealing member contacts the insulating layer or the base layerthrough the hole.

According to one or more embodiments of the inventive concept, anorganic light emitting display apparatus includes a base layer, a powersupply line, a voltage supply line, an auxiliary power supply pattern,an auxiliary voltage pattern, an organic light emitting diode, anencapsulation layer, and a sealing member.

In one or more embodiments, the power supply line is on the base layerto receive a common voltage.

In one or more embodiments, the voltage supply line is on the base layerto receive source voltage greater than the common voltage.

In one or more embodiments, the auxiliary power supply pattern is on thepower supply line, overlapped with the power supply line, and connectedto the power supply line.

In one or more embodiments, the auxiliary voltage pattern is above thevoltage supply line, overlapped with the voltage supply line, andconnected to the voltage supply line.

In one or more embodiments, the organic light emitting diode is abovethe auxiliary power supply pattern and the auxiliary voltage pattern.

In one or more embodiments, the encapsulation layer is on the organiclight emitting diode.

In one or more embodiments, the sealing member is between the base layerand the encapsulation layer to seal the organic light emitting diode andoverlapped with the auxiliary power supply pattern and the auxiliaryvoltage pattern.

In one or more embodiments, the auxiliary power supply pattern is on asame layer as the auxiliary voltage pattern.

In one or more embodiments, each of the auxiliary power supply patternand the auxiliary voltage pattern includes a material having a meltingpoint higher than a melting point of each of the power supply line andthe voltage supply line.

In one or more embodiments, each of the auxiliary power supply patternand the auxiliary voltage pattern contacts the sealing member.

According to one or more embodiments of the inventive concept, anorganic light emitting display apparatus includes a base layer, atransistor, an organic light emitting diode, a power supply line, anauxiliary power supply pattern, an encapsulation layer, and a sealingmember.

In one or more embodiments, the transistor is on the base layer andincludes a control electrode, an input electrode, and an outputelectrode.

In one or more embodiments, the organic light emitting diode is abovethe transistor and connected to the transistor.

In one or more embodiments, the power supply line is on the base layerto receive a constant voltage, and is on a same layer as one of thecontrol electrode, the input electrode, and the output electrode of thetransistor.

In one or more embodiments, the auxiliary power supply pattern is abovethe power supply line and the transistor, under the organic lightemitting diode, and connected to the power supply line.

In one or more embodiments, the encapsulation layer is on the organiclight emitting diode.

In one or more embodiments, the sealing member is between the base layerand the encapsulation layer to seal the organic light emitting diode andoverlapped with the auxiliary power supply pattern and the auxiliaryvoltage pattern.

According to an aspect of embodiments of the present disclosure, thenon-display area of the display panel may be reduced.

In addition, circuit elements overlapped with the sealing member may beprevented or substantially prevented from becoming defective when thesealing member is cured.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects of the present disclosure will becomereadily apparent by reference to the following detailed description whenconsidered in conjunction with the accompanying drawings, wherein:

FIG. 1 is a perspective view showing a display apparatus according to anexemplary embodiment of the present disclosure;

FIG. 2 is a cross-sectional view showing a display module of FIG. 1;

FIG. 3 is a plan view showing a display panel according to an exemplaryembodiment of the present disclosure;

FIG. 4 is an equivalent circuit diagram showing a pixel according to anexemplary embodiment of the present disclosure;

FIG. 5 is a cross-sectional view taken along the line I-I′ of FIG. 3;

FIG. 6 is a view showing a region “AA” of FIG. 3;

FIG. 7 is a cross-sectional view taken along the line II-II′ of FIG. 3;

FIG. 8 is a cross-sectional view showing a portion of a display panel ofa display apparatus according to another exemplary embodiment of thepresent disclosure;

FIG. 9 is a circuit diagram showing a portion of a display panel of adisplay apparatus according to another exemplary embodiment of thepresent disclosure; and

FIG. 10 is a cross-sectional view showing the portion of the displaypanel according to the exemplary embodiment of FIG. 9.

DETAILED DESCRIPTION

Herein, some example embodiments of the present invention will beexplained in further detail with reference to the accompanying drawings.In the following description, it is to be understood that when anelement, such as a region, layer, or portion, is referred to as being“on,” “connected to,” or “coupled to” another element or layer, it maybe directly on, connected, or coupled to the other element or layer orone or more intervening elements or layers may be present.

Like numerals refer to like elements throughout. In the drawings, thethicknesses and sizes of elements may be exaggerated for clarity. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

The use of the terms “first,” “second,” etc. does not denote any orderor importance, but, rather, the terms “first,” “second,” etc. are usedto distinguish one element from another. Thus, a first element,component, region, layer, or section discussed below could be termed asecond element, component, region, layer, or section without departingfrom the teachings of the present disclosure. It is to be understoodthat the singular forms “a,” “an,” and “the” include plural referentsunless the context clearly dictates otherwise.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures.

It is to be further understood that the terms “includes” and/or“including,” when used in this specification, specify the presence ofstated features, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, steps, operations, elements, components,and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments of theinventive concept belong. It is to be further understood that terms,such as those defined in commonly-used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

FIG. 1 is a perspective view showing a display apparatus 1000 accordingto an exemplary embodiment of the present disclosure; and FIG. 2 is across-sectional view showing a display module DM of FIG. 1.

The display apparatus 1000 may be applied to a large-sized electronicdevice, such as a television set and a monitor, and a small andmedium-sized electronic device, such as a mobile phone, a tabletcomputer, a car navigation unit, a game unit, and a smart watch, forexample.

Referring to FIG. 1, the display apparatus 1000 according to anembodiment includes a display module DM, a window member WM, and ahousing member HM.

A display surface IS, through which an image IM of the display module DMis displayed, is substantially parallel to a surface defined by a firstdirection axis DR1 and a second direction axis DR2. A third directionaxis DR3 indicates a normal line direction of the display surface IS,i.e., a thickness direction of the display module DM. Front (or upper)and rear (or lower) surfaces of each member are distinguished from eachother by the third direction axis DR3. However, directions indicated bythe first, second, and third direction axes DR1, DR2, and DR3 arerelative to each other, and, thus, the directions indicated by thefirst, second, and third direction axes DR1, DR2, and DR3 may be changedto other directions. Herein, first, second, and third directions, whichare respectively indicated by the first, second, and third directionaxes DR1, DR2, and DR3, will be assigned with the same referencenumerals as those of the first, second, and third direction axes DR1,DR2, and DR3.

In an embodiment, the display module DM may be a flat and rigid displaydevice; however, the display module DM is not limited to the flat andrigid display device. That is, the display module DM may be a flexibledisplay module.

As shown in FIG. 1, the display module DM includes a display area DM-DAthrough which the image IM is displayed, and a non-display area DM-NDAdisposed adjacent to the display area DM-DA. The image IM is notdisplayed through the non-display area DM-NDA. FIG. 1 shows a vase as arepresentative example of the image IM. As an example, the display areaDM-DA may have a quadrangular shape, and the non-display area DM-NDAsurrounds the display area DM-DA, but the present disclosure is notlimited thereto or thereby. That is, the shape of the display area DM-DAand the shape of the non-display area DM-NDA may be designed or variedrelative to each other.

The window member WM is disposed on the display module DM. The windowmember WM protects the display module DM. The window member WM iscoupled to the housing member HM to define an internal spacetherebetween. The window member WM and the housing member HM define anexterior of the display apparatus 1000.

The window member WM is divided into a transmission area TA and a bezelarea BA when viewed in a plan view. The transmission area TA transmitsmost of light incident thereto. The transmission area TA has an opticaltransparency. In an embodiment, the transmission area TA has a lighttransmittance of about 90% or more. The transmission area TA correspondsto the display area DM-DA of the display module DM.

The bezel area BA blocks most of light incident thereto. In anembodiment, the bezel area BA ensures or provides that componentsarranged under the window member WM are not visible from an outside ofthe window member WM. In addition, the bezel area BA reduces areflection of the light incident thereto from the outside of the windowmember WM. The bezel area BA corresponds to the non-display area DM-NDAof the display module DM.

The bezel area BA is adjacent to the transmission area TA. A shape ofthe transmission area TA in a plan view is defined by the bezel area BA.

The housing member HM provides an internal space (e.g., a predeterminedinternal space). The display module DM is accommodated in the internalspace. In addition to the display module DM, various electronic parts,e.g., a power supply, a storage device, a sound input/output module, anda camera, may be arranged in the internal space of the housing memberHM.

FIG. 2 is a cross-sectional view showing the display module DM accordingto an exemplary embodiment of the present disclosure. FIG. 2 shows across-section defined by the first direction axis DR1 and the thirddirection axis DR3.

As shown in FIG. 2, in an embodiment, the display module DM includes adisplay panel DP and a touch sensing unit TS (or “touch sensing layer”).Although not shown separately, the display module DM according to anexemplary embodiment of the present disclosure may further include aprotective member disposed on a lower surface of the display panel DP.

The display panel DP may be a light emitting type display panel, but isnot particularly limited. For instance, the display panel DP may be anorganic light emitting display panel or a quantum-dot light emittingdisplay panel. A light emitting layer of the organic light emittingdisplay panel includes an organic light emitting material. A lightemitting layer of the quantum-dot light emitting display panel includesa quantum dot or a quantum rod. Herein, the organic light emittingdisplay panel will be described as the display panel DP.

The display panel DP includes a base layer SUB, a circuit element layerDP-CL, a display element layer DP-OLED, and an encapsulation layer ENP.The circuit element layer DP-CL, the display element layer DP-OLED, andthe encapsulation layer ENP are disposed on the base layer SUB. Althoughnot shown separately, the display panel DP may further includefunctional layers, such as a refractive index control layer.

In an embodiment, the base layer SUB may include at least one plasticfilm. The base layer SUB may be a flexible substrate and may include aplastic substrate, a glass substrate, a metal substrate, or anorganic-inorganic hybrid material substrate. The display area DM-DA andthe non-display area DM-NDA described with reference to FIG. 1 may bedefined in the base layer SUB.

The circuit element layer DP-CL includes at least one intermediateinsulating layer and a circuit element. In an embodiment, theintermediate insulating layer includes at least one intermediateinorganic layer and at least one intermediate organic layer. The circuitelement includes signal lines, a driving circuit for the pixel, and thelike. These will be described in further detail later.

The display element layer DP-OLED includes at least organic lightemitting diodes. The display element layer DP-OLED may further includean organic layer, such as a pixel definition layer.

The encapsulation layer ENP is disposed on the display element layerDP-OLED and encapsulates the display element layer DP-OLED.

The display panel DP may further include a sealing member SL disposedbetween the circuit element layer DP-CL and the encapsulation layer ENP.The sealing member SL is disposed between the circuit element layerDP-CL and the encapsulation layer ENP to adhere the circuit elementlayer DP-CL and the encapsulation layer ENP. The sealing member SLblocks the display element layer DP-OLED from external moisture andoxygen together with the circuit element layer DP-CL and theencapsulation layer ENP.

The touch sensing unit TS obtains coordinate information of an externalinput. The touch sensing unit TS may be disposed on the encapsulationlayer ENP. The touch sensing unit TS may be adhered to the encapsulationlayer ENP by an adhesive layer and may be formed on the encapsulationlayer ENP through a thin film process.

The touch sensing unit TS may sense the external input, for example,using an electrostatic capacitive method. However, the operation methodof the touch sensing unit TS is not particularly limited, and the touchsensing unit TS according to an exemplary embodiment of the presentdisclosure may sense the external input using an electromagneticinduction method or a pressure sensing method.

FIG. 3 is a plan view showing the display panel DP according to anexemplary embodiment of the present disclosure.

Referring to FIG. 3, the display panel DP includes a display area DA anda non-display area NDA when viewed in a plan view. In the presentexemplary embodiment, the non-display area NDA may be defined along anedge of the display area DA. The display area DA and the non-displayarea NDA of the display panel DP respectively correspond to the displayarea DM-DA and the non-display area DM-NDA of the display module DMshown in FIG. 1. However, the display area DA and the non-display areaNDA of the display panel DP need not necessarily be the same as thedisplay area DM-DA and the non-display area DM-NDA of the display moduleDM and may be changed depending on structure and design of the displaypanel DP.

The display panel DP includes a plurality of pixels PX. The pixels PXare arranged in the display area DA. Each of the pixels PX includes anorganic light emitting diode and a pixel driving circuit connected tothe organic light emitting diode. The display panel DP may include aplurality of signal lines and a pad part PD. The signal lines mayinclude scan lines GL, data lines DL, light emitting lines EL, a controlsignal line SL-D, an initialization line SL-Vint, a voltage line SL-VDD,and a power supply line E-VSS. The signal lines and the pad part PD maybe included in the circuit element layer DP-CL shown in FIG. 2.

Some lines of the scan lines GL, the data lines DL, the light emittinglines EL, the control signal line SL-D, the initialization line SL-Vint,the voltage line SL-VDD, and the power supply line E-VSS are arranged ona same layer, and the other lines are arranged on a different layer.

Each of the scan lines GL is connected to a corresponding pixel PX amongthe pixels PX, and each of the data lines DL is connected to acorresponding pixel PX among the pixels PX. In an embodiment, each ofthe light emitting lines EL is arranged parallel to a corresponding scanline among the scan lines GL. The control signal line SL-D appliescontrol signals to a pixel driving circuit GDC. The initialization lineSL-Vint applies an initialization voltage to the pixels PX. The voltageline SL-VDD is connected to the pixels PX and applies a source voltage(e.g., a first voltage) to the pixels PX. The voltage line SL-VDDincludes a plurality of lines extending in the first direction DR1 and aplurality of lines extending in the second direction DR2. In anembodiment, the power supply line E-VSS is disposed in the non-displayarea NDA to surround three side surfaces of the display area DA. Thepower supply line E-VSS applies a common voltage (e.g., a secondvoltage) to the pixels PX. The common voltage may have a voltage levellower than the source voltage.

The display panel DP may further include the pixel driving circuit GDC.The pixel driving circuit GDC is disposed at a side portion of thenon-display area NDA and connected to the scan lines GL and the lightemitting lines EL.

The pixel driving circuit GDC may include a gate driving circuit (notshown) and a light emitting line driving circuit (not shown). The gatedriving circuit (not shown) may apply signals to the scan lines GL, andthe light emitting line driving circuit (not shown) may apply signals tothe light emitting lines EL.

The pixel driving circuit GDC may be included in the circuit elementlayer DP-CL shown in FIG. 2. In an embodiment, the pixel driving circuitGDC may include a plurality of thin film transistors formed through asame process as the driving circuit of the pixels PX, for example, a lowtemperature polycrystalline silicon (LTPS) process or a low temperaturepolycrystalline oxide (LTPO) process.

The pad part PD includes a plurality of pads. Some pads of the pad partPD are connected to ends of the data lines DL, the control signal lineSL-D, the initialization line SL-Vint, and the voltage line SL-VDD, andthe other pads of the pad part PD are connected to touch signal lines ofthe touch sensing unit TS.

Although not shown in figures, the display panel DP may further includea bank (not shown) disposed between the display area DA and the pad partPD. In addition, the display panel DP may further include a dam portion(not shown) surrounding the edge of the display area DA. When aspecified layer is formed by a printing method during manufacture of thedisplay panel DP, the bank and the dam portion may prevent orsubstantially prevent the specified layer from overflowing the bank orthe dam portion.

When viewed in a plan view, the sealing member SL is disposed in thenon-display area NDA of the display panel DP to surround the displayarea DA. In an embodiment, the sealing member SL is disposed to overlapwith the power supply line E-VSS. In an embodiment, the sealing memberSL overlaps with a portion of the pixel driving circuit GDC.

The display panel DP may further include an auxiliary power supplypattern VSSP and an auxiliary voltage pattern VDDP.

In an embodiment, when viewed in a plan view, the auxiliary power supplypattern VSSP is electrically connected to the power supply line E-VSSand overlaps with the sealing member SL.

In an embodiment, when viewed in a plan view, the auxiliary voltagepattern VDDP is electrically connected to the voltage line SL-VDD andoverlaps with the sealing member SL. The auxiliary voltage pattern VDDPis disposed between the pad part PD and the display area DA when viewedin a plan view.

FIG. 4 is an equivalent circuit diagram showing a pixel PX of FIG. 3.

The pixel PX according to an exemplary embodiment of the presentdisclosure may include a plurality of thin film transistors T1 to T7, astorage capacitor Cst, and an organic light emitting diode OLED.

In an embodiment, the thin film transistors T1 to T7 include a drivingtransistor T1, a switching transistor T2, a compensating transistor T3,an initializing transistor T4, a first light emitting control transistorT5, a second light emitting control transistor T6, and a bypasstransistor T7.

The pixel PX includes a first scan line 14 transmitting an n-th scansignal Sn to the switching transistor T2 and the compensating transistorT3, a second scan line 24 transmitting an (n−1)th scan signal Sn−1 tothe initializing transistor T4, a third scan line 34 transmitting an(n+1)th scan signal Sn+1 to the bypass transistor T7, a light emittingline 15 transmitting a light emitting control signal En to the firstlight emitting control transistor T5 and the second light emittingcontrol transistor T6, a data line 16 transmitting a data signal Dm, avoltage line 26 transmitting the source voltage ELVDD, and aninitializing line 22 transmitting an initializing voltage Vint toinitialize the driving transistor T1.

A gate electrode G1 of the driving transistor T1 is connected to a firstelectrode C1 of the storage capacitor Cst. A source electrode S1 of thedriving transistor T1 is connected to the voltage line 26 via the firstlight emitting control transistor T5. A drain electrode D1 of thedriving transistor T1 is electrically connected to an anode of theorganic light emitting diode OLED via the second light emitting controltransistor T6. The driving transistor T1 receives the data signal Dm inresponse to a switching operation of the switching transistor T2 toprovide the organic light emitting diode OLED with a driving current Id.

A gate electrode G2 of the switching transistor T2 is connected to thefirst scan line 14. A source electrode S2 of the switching transistor T2is connected to the data line 16. A drain electrode D2 of the switchingtransistor T2 is connected to the source electrode S1 of the drivingtransistor T1 and connected to the voltage line 26 via the first lightemitting control transistor T5. The switching transistor T2 is turned onin response to the n-th scan signal Sn applied thereto through the firstscan line 14 to perform the switching operation that transmits the datasignal Dm applied to the data line 16 to the source electrode S1 of thedriving transistor T1.

A gate electrode G3 of the compensating transistor T3 is connected tothe first scan line 14. A source electrode S3 of the compensatingtransistor T3 is connected to the drain electrode D1 of the drivingtransistor T1 and connected to the anode of the organic light emittingdiode OLED via the second light emitting control transistor T6. A drainelectrode D3 of the compensating transistor T3 is connected to the firstelectrode C1 of the storage capacitor Cst, a source electrode S4 of theinitializing transistor T4, and the gate electrode G1 of the drivingtransistor T1. The compensating transistor T3 is turned on in responseto the n-th scan signal Sn applied thereto through the first scan line14 to connect the gate electrode G1 of the driving transistor T1 to thedrain electrode D1 of the driving transistor T1, and, thus, the drivingtransistor T1 is connected in a diode configuration.

A gate electrode G4 of the initializing transistor T4 is connected tothe second scan line 24. A drain electrode D4 of the initializingtransistor T4 is connected to the initializing line 22. The sourceelectrode S4 of the initializing transistor T4 is connected to the firstelectrode C1 of the storage capacitor Cst, the drain electrode D3 of thecompensating transistor T3, and the gate electrode G1 of the drivingtransistor T1. The initializing transistor T4 is turned on in responseto the (n−1)th scan signal Sn−1 applied thereto through the second scanline 24 and applies the initializing voltage Vint to the gate electrodeG1 of the driving transistor T1 to initialize a voltage of the gateelectrode G1 of the driving transistor T1.

A gate electrode G5 of the first light emitting control transistor T5 isconnected to the light emitting line 15. The first light emittingcontrol transistor T5 is connected between the voltage line 26 and thedriving transistor T1. A source electrode S5 of the first light emittingcontrol transistor T5 is connected to the voltage line 26. A drainelectrode D5 of the first light emitting control transistor T5 isconnected to the source electrode S1 of the driving transistor T1 andthe drain electrode D2 of the switching transistor T2. When the lightemitting control signal En is applied to the gate electrode G5 of thefirst light emitting control transistor T5, the first light emittingcontrol transistor T5 is turned on, and, thus, the driving current Idflows through the organic light emitting diode OLED. The first lightemitting control transistor T5 may determine a timing at which thedriving current Id flows through the organic light emitting diode OLED.

A gate electrode G6 of the second light emitting control transistor T6is connected to the light emitting line 15. The second light emittingcontrol transistor T6 is connected between the driving transistor T1 andthe organic light emitting diode OLED. A source electrode S6 of thesecond light emitting control transistor T6 is connected to the drainelectrode D1 of the driving transistor T1 and the source electrode S3 ofthe compensating transistor T3. A drain electrode D6 of the second lightemitting control transistor T6 is electrically connected to the anode ofthe organic light emitting diode OLED. The first light emitting controltransistor T5 and the second light emitting control transistor T6 areturned on in response to the light emitting control signal En providedthrough the light emitting line 15. When the light emitting controlsignal En is applied to the gate electrode G6 of the second lightemitting control transistor T6, the second light emitting controltransistor T6 is turned on, and, thus, the driving current Id flowsthrough the organic light emitting diode OLED. The second light emittingcontrol transistor T6 may determine the timing at which the drivingcurrent Id flows through the organic light emitting diode OLED.

A gate electrode G7 of the bypass transistor T7 is connected to thethird scan line 34. A source electrode S7 of the bypass transistor T7 isconnected to the anode of the organic light emitting diode OLED. A drainelectrode D7 of the bypass transistor T7 is connected to theinitializing line 22. The bypass transistor T7 is turned on in responseto the (n+1)th scan signal Sn+1 applied thereto through the third scanline 34 to initialize the anode of the organic light emitting diodeOLED.

A second electrode C2 of the storage capacitor Cst is connected to thevoltage line 26. The first electrode C1 of the storage capacitor Cst isconnected to the gate electrode G1 of the driving transistor T1, thedrain electrode D3 of the compensating transistor T3, and the sourceelectrode S4 of the initializing transistor T4.

A cathode of the organic light emitting diode OLED receives a referencevoltage ELVSS. The organic light emitting diode OLED receives thedriving current Id from the driving transistor T1 to emit a light.

In the pixel PX according to an exemplary embodiment of the presentdisclosure, the gate electrodes G2, G3, G4, and G7 of the switchingtransistor T2, the compensating transistor T3, the initializingtransistor T4, and the bypass transistor T7 may receive signals from thegate driving circuit (not shown) of the pixel driving circuit GDCdescribed with reference to FIG. 3.

In the pixel PX according to an exemplary embodiment of the presentdisclosure, the first light emitting control transistor T5 and thesecond light emitting control transistor T6 may receive signals from thelight emitting line driving circuit (not shown) of the pixel drivingcircuit GDC described with reference to FIG. 3.

In another exemplary embodiment of the present disclosure, the numberand connection of the transistors T1 to T7 in the pixels PX may bechanged in various ways.

FIG. 5 is a cross-sectional view taken along the line I-I′ of FIG. 3;and FIG. 6 is a view showing a region “AA” of FIG. 3.

Referring to FIGS. 2 and 5, the base layer SUB may be formed of variousmaterials, such as glass, metal, or plastic. In an embodiment, theplastic may be polyimide (PI), polyethylene naphthalate (PEN),polyethylene terephthalate (PET), polyarylate, polycarbonate (PC),polyetherimide (PEI), or polyether sulfone (PES).

In an embodiment, the display area DA and the non-display area NDA ofthe display panel DP may be substantially identically defined in thebase layer SUB.

The circuit element layer DP-CL is disposed on the base layer SUB.

The circuit element layer DP-CL may include the pixel driving circuitGDC, the signal lines, and the pad part PD, which are described withreference to FIG. 3, and the transistors T1 to T7 of the pixel PXdescribed with reference to FIG. 4. Referring to FIGS. 3 to 6, a lightemitting line driving circuit ETC of the pixel driving circuit GDC isdisposed farther from the display area DA of the display panel DP than agate driving circuit GTC when viewed in a plan view. Each of the gatedriving circuit GTC and the light emitting line driving circuit ETC mayinclude a plurality of transistors and electronic elements.

FIG. 5 shows a light emitting line driving circuit area ETCA in whichthe light emitting line driving circuit ETC is disposed and a gatedriving circuit area GTCA in which the gate driving circuit GTC isdisposed. FIG. 5 shows a first transistor TFT1 included in the lightemitting line driving circuit ETC and a second transistor TFT2 includedin the gate driving circuit GTC as representative examples. In addition,FIG. 5 shows a third transistor TFT3 included in the pixel PX.

The first transistor TFT1 includes a first semiconductor pattern SM1, afirst control electrode CE1, a first input electrode IE1, and a firstoutput electrode OE1.

The second transistor TFT2 includes a second semiconductor pattern SM2,a second control electrode CE2, a second input electrode IE2, and asecond output electrode OE2.

The third transistor TFT3 includes a third semiconductor pattern SM3, athird control electrode CE3, a third input electrode IE3, and a thirdoutput electrode OE3.

The circuit element layer DP-CL may include a buffer layer 110 andfirst, second, third, and fourth insulating layers 120, 130, 140, and150.

The buffer layer 110 is disposed on the base layer SUB. The buffer layer110 is disposed to planarize an upper surface of the base layer SUB orto prevent or substantially prevent a foreign matter from entering thefirst, second, and third semiconductor patterns SM1, SM2, and SM3 of thefirst, second, and third transistors TFT1, TFT2, and TFT3. In anembodiment, the buffer layer 110 may be formed of silicon oxide orsilicon nitride.

The first, second, and third semiconductor patterns SM1, SM2, and SM3may be disposed on the buffer layer 110.

The first insulating layer 120 may be disposed on the first, second, andthird semiconductor patterns SM1, SM2, and SM3. The first insulatinglayer 120 may include an organic or inorganic insulating layer.

The first, second, and third control electrodes CE1, CE2, and CE3 may bedisposed on the first insulating layer 120.

The second insulating layer 130 may be disposed on the first, second,and third control electrodes CE1, CE2, and CE3. The second insulatinglayer 130 may include an organic or inorganic insulating layer.

The first, second, and third input electrodes IE1, IE2, and IE3 and thefirst, second, and third output electrodes OE1, OE2, and OE3 may bedisposed on the second insulating layer 130.

The first input electrode IE1 and the first output electrode OE1 arespaced apart from each other and connected to the first semiconductorpattern SM1 through contact holes (not shown) formed through the secondinsulating layer 130.

The second input electrode IE2 and the second output electrode OE2 arespaced apart from each other and connected to the second semiconductorpattern SM2 through contact holes (not shown) formed through the secondinsulating layer 130.

The third input electrode IE3 and the third output electrode OE3 arespaced apart from each other and connected to the third semiconductorpattern SM3 through contact holes (not shown) formed through the secondinsulating layer 130.

According to another exemplary embodiment of the present disclosure,positions of the first, second, and third semiconductor patterns SM1,SM2, and SM3, the first, second, and third control electrodes CE1, CE2,and CE3, the first, second, and third input electrodes IE1, IE2, andIE3, and the first, second, and third output electrodes OE1, OE2, andOE3 may be varied from the structure of each of the first, second, andthird semiconductor patterns SM1, SM2, and SM3 shown in FIG. 5.

According to another exemplary embodiment of the present disclosure,some layers of the first, second, and third transistors TFT1, TFT2, andTFT3 may be formed on a same layer as and formed of a same material asthose of the auxiliary power supply pattern VSSP. For example, in anembodiment, the third input electrode IE3 and the third output electrodeOE3 of the third transistor TFT3 are disposed on a same layer as thepower supply line E-VSS; however according to another embodiment, thethird input electrode IE3 and the third output electrode OE3 of thethird transistor TFT3 may be disposed on a same layer as the auxiliarypower supply pattern VSSP and may be connected to the thirdsemiconductor pattern SM3 through contact holes formed through thesecond and third insulating layers 130 and 140.

According to another exemplary embodiment of the present disclosure, ametal layer for the first, second, and third transistors TFT1, TFT2, andTFT3 is formed when the auxiliary power supply pattern VSSP is formed,and a design margin of the first, second, and third transistors TFT1,TFT2, and TFT3 may be improved, and, as a result, a display quality maybe improved.

Referring to FIG. 5 again, the power supply line E-VSS may be disposedon the second insulating layer 130. In an exemplary embodiment of thepresent disclosure, the power supply line E-VSS may be disposed on asame layer as the first, second, and third input electrodes IE1, IE2,and IE3 and the first, second, and third output electrodes OE1, OE2, andOE3. In an exemplary embodiment of the present disclosure, theinitializing line SL-Vint and the voltage line SL-VDD may be disposed ona same layer as the power supply line E-VSS.

The power supply line E-VSS may include a single layer or a plurality oflayers. As an example, the power supply line E-VSS may have a structurein which titanium/aluminum/titanium (Ti/Al/Ti) are sequentially stacked.

The third insulating layer 140 may be disposed on the power supply lineE-VSS and the first, second, and third transistors TFT1, TFT2, and TFT3.The third insulating layer 140 may include an organic or inorganicinsulating layer. The third insulating layer 140 may be defined as afirst intermediate insulating layer.

The auxiliary power supply pattern VSSP may be disposed on the thirdinsulating layer 140. The auxiliary power supply pattern VSSP mayoverlap with the power supply line E-VSS. The auxiliary power supplypattern VSSP may be electrically connected to the power supply lineE-VSS through a contact hole (not shown) formed through the thirdinsulating layer 140.

In an embodiment, the auxiliary power supply pattern VSSP may be formedof a material with a melting point higher than that of the first controlelectrode CE1, the first input electrode IE1, and the first outputelectrode OE1.

The auxiliary power supply pattern VSSP may include a metal material,e.g., molybdenum (Mo).

The fourth insulating layer 150 may be disposed on the auxiliary powersupply pattern VSSP. The fourth insulating layer 150 may overlap with aportion of the auxiliary power supply pattern VSSP. The fourthinsulating layer 150 may include an organic or inorganic insulatinglayer. The fourth insulating layer 150 may be defined as a secondintermediate insulating layer.

The display element layer DP-OLED may include a pixel definition layerPDL and an organic light emitting element OD.

The pixel definition layer PDL is disposed on the fourth insulatinglayer 150. The pixel definition layer PDL is provided with a pluralityof openings defined therethrough. The organic light emitting element ODmay be provided in each opening.

The organic light emitting element OD includes a first electrode E1, asecond electrode E2, and a light emitting layer EML. The first electrodeE1 may be disposed on the circuit element layer DP-CL. The firstelectrode E1 may be electrically connected to the third transistor TFT3after passing through the third and fourth insulating layers 140 and150. The first electrode E1 may be provided in a plural number. At leastportions of each of the first electrodes E1 may be exposed through theopenings.

The second electrode E2 is disposed on the first electrode E1. Thesecond electrode E2 may overlap with the first electrodes E1 and thepixel definition layer PDL. When the organic light emitting element ODis provided in a plural number, the second electrode E2 of each of theorganic light emitting elements OD may receive the same voltage.Accordingly, an additional patterning process required to form thesecond electrode E2 may be omitted. In an embodiment, the secondelectrode E2 may be provided in a plural number such that the secondelectrodes E2 respectively correspond to the openings.

The light emitting layer EML is disposed between the first electrode E1and the second electrode E2. The light emitting layer EML may beprovided in a plural number to respectively correspond to the openings.The organic light emitting element OD may activate the light emittinglayer EML according to a difference in electric potential between thefirst electrode E1 and the second electrode E2 to generate the light.

Although not shown in the figures, the organic light emitting element ODmay further include an electron control layer disposed between the firstelectrode El and the light emitting layer EML and a hole control layerdisposed between the light emitting layer EML and the second electrodeE2.

The display element layer DP-OLED may further include an auxiliarypattern VSP disposed on the fourth insulating layer 150. The auxiliarypattern VSP may be disposed on a same layer as the first electrode E1.

The auxiliary pattern VSP may be disposed in the non-display area NDA ofthe display panel DP. The auxiliary pattern VSP may be connected to theauxiliary power supply pattern VSSP through a contact hole (not shown)formed through the fourth insulating layer 150.

The second electrode E2 may be connected to the auxiliary pattern VSPthrough a contact hole (not shown) formed through the pixel definitionlayer PDL in the non-display area NDA.

The power supply line E-VSS may apply a common voltage to the secondelectrode E2 through the auxiliary power supply pattern VSSP and theauxiliary pattern VSP.

The sealing member SL may overlap with the auxiliary power supplypattern VSSP. The sealing member SL may be disposed between theauxiliary power supply pattern VSSP and the encapsulation layer ENP andmay make contact with the auxiliary power supply pattern VSSP.

The sealing member SL may include a light-curable resin or aheat-curable resin to be coupled to the auxiliary power supply patternVSSP, the third insulating layer 140, and the encapsulation layer ENP.

The sealing member SL may overlap with a portion of the pixel drivingcircuit GDC of FIG. 3, i.e., the light emitting line driving circuitETC. Accordingly, the non-display area NDA of the display panel DP maybe reduced.

The auxiliary power supply pattern VSSP may cover metal layers of thecircuit element layer DP-CL overlapped with the sealing member SL. In anembodiment, the auxiliary power supply pattern VSSP may cover componentsof the power supply line E-VSS and the light emitting line drivingcircuit ETC, i.e., the first transistor TFT1.

The sealing member SL may be formed by providing a curable materialbetween the auxiliary power supply pattern VSSP and the encapsulationlayer ENP and irradiating a laser beam downward from an upper side ofthe encapsulation layer ENP. When the laser beam is irradiated to thecurable material, if a temperature of metal layers disposed in an areaoverlapped with the curable material, for example, elements of the pixeldriving circuit GDC and the power supply line E-VSS, rises above amelting point thereof, defects may occur.

However, according to the display apparatus of an exemplary embodimentof present disclosure, when the auxiliary power supply pattern VSSP isdisposed above the pixel driving circuit GDC and the power supply lineE-VSS to overlap with the sealing member SL, the pixel driving circuitGDC and the power supply line E-VSS may be prevented or substantiallyprevented from being made defective due to the laser beam. To this end,the auxiliary power supply pattern VSSP may include a material with amelting point higher than that of the metal layer of the power supplyline E-VSS. In a case in which the metal layer of the power supply lineE-VSS includes a plurality of layers, the auxiliary power supply patternVSSP may include a material with a melting point higher than that of themetal layer with a lowest melting point among the layers of the powersupply line E-VSS.

In addition, the auxiliary power supply pattern VSSP is connected to thepower supply line E-VSS to reduce a resistance of a line supplying thecommon voltage, and, thus, the common voltage may be uniformly appliedto the second electrode E2.

The light emitting line driving circuit ETC is turned on for most of apixel operation period to reduce an influence caused by a parasiticcapacitor formed between the auxiliary power supply pattern VSSP and thelight emitting line driving circuit ETC. Accordingly, the light emittingline driving circuit ETC may be formed to overlap with the power supplypattern VSSP to reduce the non-display area NDA of the display panel DP.

The gate driving circuit GTC is turned off for most of the pixeloperation period and is relatively affected by a parasitic capacitorformed between the gate driving circuit GTC and other elements. That is,since a pulse signal output from the gate driving circuit GTC has apulse width corresponding to a very small period (less than about 1% ofthe pixel operation period, a waveform damage due to a delay caused bythe parasitic capacitor may cause defects in an operation of circuits.Accordingly, the gate driving circuit GTC may be disposed not to overlapwith the power supply pattern VSSP in an exemplary embodiment of thepresent disclosure.

FIG. 7 is a cross-sectional view taken along the line II-II′ of FIG. 3.

The pad part PD may include a first pad layer PD1 and a second pad layerPD2.

The first pad layer PD1 may be disposed on a same layer as the first,second, and third control electrodes CE1, CE2, and CE3. The second padlayer PD2 may be disposed on a same layer as the voltage line SL-VDD.The second pad layer PD2 may make contact with the first pad layer PD1through a contact hole (not shown) formed through the second insulatinglayer 130.

In an embodiment, the display panel DP may further include a flexibleprinted circuit board FPC. The flexible printed circuit board FPC may bebent toward a rear surface of the display panel DP after being attachedto the display panel DP.

The flexible printed circuit board FPC may be connected to the pad partDP through a conductive adhesive member ACF. The flexible printedcircuit board FPC may include a flexible base film BF, a circuit boardpad CPD, and an integrated circuit chip IC. The circuit board pad CPDmay be disposed on the base film BF to make contact with the conductiveadhesive member ACF. The integrated circuit chip IC may be mounted onthe base film BF and may apply signals required to drive the displaypanel DP through the circuit board pad CPD.

The voltage line SL-VDD may be disposed on a same layer as the powersupply line E-VSS.

The auxiliary voltage pattern VDDP may be disposed on the thirdinsulating layer 140. The auxiliary voltage pattern VDDP may overlapwith the voltage line SL-VDD. The auxiliary voltage pattern VDDP may beelectrically connected to the voltage line SL-VDD through a contact hole(not shown) formed through the third insulating layer 140.

The auxiliary voltage pattern VDDP may be disposed on a same layer asand may include a same material as the auxiliary power supply patternVSSP described with reference to FIG. 5.

The sealing member SL may overlap with the auxiliary voltage patternVDDP. The sealing member SL may be disposed between the auxiliaryvoltage pattern VDDP and the encapsulation layer ENP and may makecontact with the auxiliary voltage pattern VDDP.

The auxiliary voltage pattern VDDP may be connected to the voltage lineSL-VDD to reduce the resistance of the line applying the source voltage,and the source voltage may be uniformly applied to the first lightemitting control transistor T5 described with reference to FIG. 4.

FIG. 8 is a cross-sectional view showing a portion of a display panelDP1 of a display apparatus according to another exemplary embodiment ofthe present disclosure. FIG. 8 shows a cross-section corresponding tothe line I-I′ of FIG. 3 in the display panel DP1 according to anotherexemplary embodiment of the present disclosure.

An auxiliary power supply pattern VSSP1 of the display panel DP1described with reference to FIG. 8 has substantially the same structureas the auxiliary power supply pattern VSSP described with reference toFIG. 5 except that the auxiliary power supply pattern VSSP1 includes oneor more holes HL1 and HL2.

As shown in FIG. 8, one first hole HL1 and one second hole HL2 aredefined through the auxiliary power supply pattern VSSP1; however, thenumber of each of the first and second holes HL1 and HL2 is not limitedto one. That is, each of the first and second holes HL1 and HL2 may beprovided in a plural number through the auxiliary power supply patternVSSP1, or only one of the first and second holes HL1 and HL2 may beprovided through the auxiliary power supply pattern VSSP1.

The first hole HL1 and the second hole HL2 may be provided to overlapwith the sealing member SL. The first hole HL1 and the second hole HL2may penetrate through the auxiliary power supply pattern VSSP1.

In an embodiment, the first hole HL1 may further penetrate through atleast one of the buffer layer 110 and the first, second, and thirdinsulating layers 120, 130, and 140 in order of the third, second, andfirst insulating layers 140, 130, and 120 and the buffer layer 110. FIG.8 shows, as a representative example, the first hole HL1 that penetratesthrough all of the buffer layer 110 and the first, second, and thirdinsulating layers 120, 130, and 140.

In an embodiment, the second hole HL2 may penetrate through theauxiliary power supply pattern VSSP1 and may not penetrate through thefirst, second, third, and fourth insulating layers 120, 130, 140, and150.

In an embodiment, a third hole HL3 may be defined through the thirdinsulating layer 140. The third hole HL3 may overlap with the sealingmember SL and may not overlap with the auxiliary power supply patternVSSP1. The third hole HL3 may further penetrate through at least one ofthe buffer layer 110 and the first and second insulating layers 120 and130 in order of the second and first insulating layers 130 and 120 andthe buffer layer 110. FIG. 8 shows, as a representative example, thethird hole HL3 that penetrates through all of the buffer layer 110 andthe first and second insulating layers 120 and 130.

In an embodiment, the sealing member SL may be formed of a materialobtained by mixing the curable material with a glass raw material. Thesealing member SL may be more securely adhered to the insulating layerand the base layer SUB formed of a glass material than a metal material.

According to the display apparatus of an exemplary embodiment of thepresent disclosure, an area in which the sealing member SL makes contactwith the insulating layers 110, 120, 130, and 140 and the base layer SUBincreases due to at least one of the first, second, and third holes HL1,HL2, and HL3, and, thus, a mechanical strength of the display panel DP1may be improved.

FIG. 9 is a circuit diagram showing a portion of a display panel of adisplay apparatus according to another exemplary embodiment of thepresent disclosure; and FIG. 10 is a cross-sectional view showing theportion of the display panel DP2 according to the exemplary embodimentof FIG. 9. FIG. 10 shows a cross-section corresponding to the lineII-II′ of FIG. 3 in the display panel DP2 according to another exemplaryembodiment of the present disclosure.

Referring to FIG. 9, one pad part PD may be connected to at least twodata lines DL1 and DL2 by a demultiplexer DX. FIG. 9 shows one pad partPD connected to first and second data lines DL1 and DL2 as arepresentative example.

The demultiplexer DX may include a first switching device SW1 and asecond switching device SW2.

The first switching device SW1 may be turned on in response to a firstcontrol signal CS1, and the second switching device SW2 may be turned onin response to a second control signal CS2. The first and secondswitching devices SW1 and SW2 may be turned on at different timings fromeach other.

The signal applied to the pad part PD may provide different data fromeach other to the first and second data lines DL1 and DL2 by the firstand second switching devices SW1 and SW2 turned on at different timingsfrom each other.

Referring to FIG. 10, the demultiplexer DX of the display panel DP2according to another exemplary embodiment may be provided to the circuitelement layer DP-CL. The first and second switching devices SW1 and SW2included in the demultiplexer DX may have the same structure as thethird transistor TFT3. FIG. 10 shows the first switching device SW1 as arepresentative example.

The first switching device SW1 may include a fourth semiconductorpattern SM4, a fourth control electrode CE4, a fourth input electrodeIE4, and a fourth output electrode OE4.

In addition, the circuit element layer DP-CL may further include ananti-static pattern ESD. The anti-static pattern ESD may be provided ina plural number, and each anti-static pattern ESD may have an islandshape. The anti-static patterns ESD may be provided in a floating stateand spaced apart from each other. The anti-static patterns ESD may beformed on various layers and may include a metal material. In anexemplary embodiment of the present disclosure, the anti-static patternESD may be disposed on a same layer as the third control electrode CE3of the third transistor TFT3. The anti-static pattern ESD may prevent orsubstantially prevent an external static electricity from entering theelements disposed in the display area DA.

The auxiliary voltage pattern VDDP may cover the demultiplexer DX, i.e.,the first switching device SW1. The first switching device SW1 mayoverlap with the sealing member SL.

In an embodiment, the auxiliary voltage pattern VDDP may cover theanti-static pattern ESD. The anti-static pattern ESD may overlap withthe sealing member SL.

When the laser beam is irradiated to the curable material while thesealing member SL is formed, if a temperature of the first switchingdevice SW1 and the anti-static pattern ESD, which are disposed in anarea overlapped with the curable material, rises above a melting pointthereof, defects may occur.

However, according to the display apparatus of an exemplary embodimentof present disclosure, the auxiliary voltage pattern VDDP may include amaterial with a melting point higher than that of the fourth controlelectrode CE4, the fourth input electrode IE4, and the fourth outputelectrode OE4.

When the auxiliary voltage pattern VDDP is disposed to overlap with thefirst switching device SW1 and the anti-static pattern ESD, the firstswitching device SW1 and the anti-static pattern ESD may be prevented orsubstantially prevented from being made defective due to the laser beam.

Although some exemplary embodiments of the present invention have beendescribed, it is to be understood that the present invention should notbe limited to these exemplary embodiments, but various changes andmodifications can be made by one of ordinary skill in the art within thespirit and scope of the present invention as herein claimed.

Therefore, the disclosed subject matter should not be limited to anysingle embodiment described herein, and the scope of the presentinventive concept shall be determined according to the attached claims.

What is claimed is:
 1. An organic light emitting display apparatuscomprising: a base layer comprising a display area and a non-displayarea adjacent to the display area; a circuit element layer comprising apower supply line on the base layer to receive a common voltage and anauxiliary power supply pattern on the power supply line, overlapped withthe power supply line, and connected to the power supply line; a displayelement layer comprising a first electrode on the circuit element layer,a light emitting layer on the first electrode, and a second electrode onthe light emitting layer and electrically connected to the auxiliarypower supply pattern; an encapsulation layer on the display elementlayer; and a sealing member between the circuit element layer and theencapsulation layer and located in the non-display area to overlap withthe auxiliary power supply pattern when viewed in a plan view.
 2. Theorganic light emitting display apparatus of claim 1, wherein theauxiliary power supply pattern contacts the sealing member.
 3. Theorganic light emitting display apparatus of claim 1, wherein the displayelement layer further comprises an auxiliary pattern in the non-displayarea, located on a same layer as the first electrode, and connected tothe auxiliary power supply pattern.
 4. The organic light emittingdisplay apparatus of claim 3, wherein the circuit element layer furthercomprises: a first intermediate insulating layer between the powersupply line and the auxiliary power supply pattern and comprising acontact hole through which the power supply line is connected to theauxiliary power supply pattern; and a second intermediate insulatinglayer between the auxiliary power supply pattern and the auxiliarypattern and comprising a contact hole through which the auxiliary powersupply pattern is connected to the auxiliary pattern, the displayelement layer further comprising a pixel definition layer between theauxiliary pattern and the second electrode, comprising a contact holethrough which the auxiliary pattern is connected to the secondelectrode, and comprising an opening in which the light emitting layeris located.
 5. The organic light emitting display apparatus of claim 1,wherein the circuit element layer further comprises: a switchingtransistor comprising a control electrode to receive a scan signal, aninput electrode receiving a data signal, and an output electrode; adriving transistor comprising an input electrode connected to the outputelectrode of the switching transistor; and a light emitting controltransistor comprising a control electrode to receive a light emittingsignal and being connected between a voltage line and the drivingtransistor or between the driving transistor and the first electrode. 6.The organic light emitting display apparatus of claim 5, wherein thecircuit element layer further comprises: a light emitting line drivingcircuit to apply the light emitting signal to the light emitting controltransistor; and a gate driving circuit to apply the scan signal to theswitching transistor, the light emitting line driving circuit beingfarther from the display area than the gate driving circuit when viewedin a plan view.
 7. The organic light emitting display apparatus of claim6, wherein the auxiliary power supply pattern overlaps with the lightemitting line driving circuit.
 8. The organic light emitting displayapparatus of claim 1, wherein the auxiliary power supply patterncomprises a material having a melting point higher than a melting pointof the power supply line.
 9. The organic light emitting displayapparatus of claim 1, wherein the circuit element layer furthercomprises: a voltage line to receive a source voltage greater than thecommon voltage; and an auxiliary voltage pattern above the voltage lineand connected to the voltage line.
 10. The organic light emittingdisplay apparatus of claim 9, wherein the auxiliary voltage pattern ison a same layer as the auxiliary power supply pattern and overlaps withthe sealing member.
 11. The organic light emitting display apparatus ofclaim 9, wherein the auxiliary voltage pattern contacts the sealingmember.
 12. The organic light emitting display apparatus of claim 9,wherein the circuit element layer further comprises a pad part in thenon-display area, and the auxiliary voltage pattern is between the padpart and the display area when viewed in a plan view.
 13. The organiclight emitting display apparatus of claim 12, wherein the circuitelement layer further comprises: a data line; and a demultiplexerconnected between the pad part and the data line, and the auxiliaryvoltage pattern covers the demultiplexer when viewed in a plan view. 14.The organic light emitting display apparatus of claim 12, wherein thecircuit element layer further comprises an anti-static pattern in thenon-display area, and the auxiliary voltage pattern covers theanti-static pattern when viewed in a plan view.
 15. The organic lightemitting display apparatus of claim 1, wherein the circuit element layerfurther comprises an insulating layer under the auxiliary power supplypattern, the auxiliary power supply pattern comprises a holetherethrough, and the sealing member contacts the insulating layer orthe base layer through the hole.
 16. An organic light emitting displayapparatus comprising: a base layer; a power supply line on the baselayer to receive a common voltage; a voltage supply line on the baselayer to receive a source voltage greater than the common voltage; anauxiliary power supply pattern on the power supply line, overlapped withthe power supply line, and connected to the power supply line; anauxiliary voltage pattern above the voltage supply line, overlapped withthe voltage supply line, and connected to the voltage supply line; anorganic light emitting diode above the auxiliary power supply patternand the auxiliary voltage pattern; an encapsulation layer on the organiclight emitting diode; and a sealing member between the base layer andthe encapsulation layer to seal the organic light emitting diode, andoverlapped with the auxiliary power supply pattern and the auxiliaryvoltage pattern.
 17. The organic light emitting display apparatus ofclaim 16, wherein the auxiliary power supply pattern is on a same layeras the auxiliary voltage pattern.
 18. The organic light emitting displayapparatus of claim 16, wherein each of the auxiliary power supplypattern and the auxiliary voltage pattern comprises a material having amelting point higher than a melting point of each of the power supplyline and the voltage supply line.
 19. The organic light emitting displayapparatus of claim 16, wherein each of the auxiliary power supplypattern and the auxiliary voltage pattern contacts the sealing member.20. An organic light emitting display apparatus comprising: a baselayer; a transistor on the base layer and comprising a controlelectrode, an input electrode, and an output electrode; an organic lightemitting diode above the transistor and connected to the transistor; apower supply line on the base layer to receive a constant voltage, andlocated on a same layer as one of the control electrode, the inputelectrode, and the output electrode of the transistor; an auxiliarypower supply pattern above the power supply line and the transistor,located under the organic light emitting diode, and connected to thepower supply line; an encapsulation layer on the organic light emittingdiode; and a sealing member between the base layer and the encapsulationlayer to seal the organic light emitting diode and overlapped with theauxiliary power supply pattern.